smbt 3906 1 oct-14-1999 pnp silicon switching transistor high dc current gain: 0.1ma to 100ma low collector-emitter saturation voltage complementary type: smbt 3904 (npn) 1 2 3 vps05161 type marking pin configuration package smbt 3906 s2a 1 = b 2 = e 3 = c sot-23 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 40 v collector-base voltage v cbo 40 emitter-base voltage v ebo 5 dc collector current i c 200 ma total power dissipation , t s = 71 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 310 k/w junction - soldering point r thjs 240 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
smbt 3906 2 oct-14-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 40 - - v collector-base breakdown voltage i c = 10 a, i b = 0 v (br)cbo 40 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 30 v, i e = 0 i cbo - - 50 na dc current gain 1) i c = 100 a, v ce = 1 v i c = 1 ma, v ce = 1 v i c = 10 ma, v ce = 1 v i c = 50 ma, v ce = 1 v i c = 100 ma, v ce = 1 v h fe 60 80 100 60 30 - - - - - - - 300 - - - collector-emitter saturation voltage1) i c = 10 ma, i b = 1 ma i c = 50 ma, i b = 5 ma v cesat - - - - 0.25 0.4 v base-emitter saturation voltage 1) i c = 10 ma, i b = 1 ma i c = 10 ma, i b = 1 ma v besat 0.65 - - - 0.85 0.95 1) pulse test: t = 300 s, d = 2%
smbt 3906 3 oct-14-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 10 ma, v ce = 20 v, f = 100 mhz f t 250 - - mhz collector-base capacitance v cb = 5 v, f = 1 mhz c cb - - 4.5 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - - 10 noise figure i c = 100 a, v ce = 5 v, r s = 1 k , f = 1 khz, f = 200 hz f - - 4 db short-circuit input impedance i c = 1 ma, v ce = 10 v, f = 1 khz h 11e 2 - 12 k open-circuit reverse voltage transf.ratio i c = 1 ma, v ce = 10 v, f = 1 khz h 12e 0.1 - 10 10 -4 short-circuit forward current transf.ratio i c = 1 ma, v ce = 10 v, f = 1 khz h 21e 100 - 400 - open-circuit output admittance i c = 1 ma, v ce = 10 v, f = 1 khz h 22e 3 - 60 s delay time v cc = 3 v, i c = 10 ma, i b1 = 1 ma, v be(off) = 0.5 v t d - - 35 ns rise time v cc = 3 v, i c = 10 ma, i b1 = 1 ma, v be(off) = 0.5 v t r - - 35 storage time v cc = 3 v, i c = 10 ma, i b1 = i b2 = 1ma t stg - - 225 fall time v cc = 3 v, i c = 10 ma, i b1 = i b2 = 1ma t f - - 75
smbt 3906 4 oct-14-1999 test circuits delay and rise time ehn00059 275 10 -3.0 v 0 +0.5 v <4.0 c -10.6 v d = 2% 300 <1.0 ? ? pf k ns ns storage and fall time ehn00060 275 10 -3.0 v 0 +9.1 v <4.0 pf c -10.9 v d = 2% 1n916 <1.0 ns t 1 s 500 10 t 1 ? ? k <<
smbt 3906 5 oct-14-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0 ehp00766 150 50 100 ?c t as t 100 200 300 mw 400 p tot t t ; as saturation voltage i c = f ( v besat , v cesat ) h fe = 10 ehp00767 2 0 v be sat c 10 1 10 0 5 v ma 0.2 0.4 0.6 0.8 1.0 1.2 ce sat v , 5 10 2 v be v ce dc current gain h fe = f ( i c ) v ce = 1v, normalized ehp00774 10 10 ma h c 5 fe 10 1 0 10 -1 5 10 10 10 -1 0 1 2 125 c 25 c -55 c 55 permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00936 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tot max tot p dc p p t t p = d t t p t
smbt 3906 6 oct-14-1999 open-circuit output admittance h 22e = f ( i c ) v ce = 10v, f = 1mhz ehp00771 10 10 ma h c s 22e 10 2 1 10 0 5 10 10 -1 0 1 5 5 5 short-circuit forward current transfer ratio h 21e = f ( i c ) v ce = 10v, f = 1mhz ehp00770 10 10 ma h c 5 21e 10 3 2 10 1 5 10 10 -1 0 1 5 5 delay time t d = f ( i c ) rise time t r = f ( i c ) ehp00772 10 ma t c r 10 1 10 0 10 10 01 2 55 ns r t t d , 3 10 5 d t 10 2 10 3 = 3 v cc v 0 v v = 2 v be 40 v 15 v h fe = 10 fall time t f = f ( i c ) ehp00773 10 ma t c f 10 1 10 0 10 10 01 2 55 ns 3 10 5 10 2 10 3 h fe = 20 25 c 125 c cc v = 40 v = 10 fe h
smbt 3906 7 oct-14-1999 short-circuit input impedance h 11e = f ( i c ) v ce = 10v, f = 1khz 10 ehp00768 -1 1 10 ma -1 10 2 10 5 5 10 0 10 0 c 11e h 1 10 5 ? k open-circuit reverse voltage transfer ratio h 12e = f ( i c ) v ce = 10v, f = 1khz ehp00769 10 ma h c 12e 10 -5 5 10 10 -1 0 1 5 -4 10 -3 10 5
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